BS170 数据手册
其他文档
BS170 13 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi BS170
- Power Dissipation (Pd): 830mW
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 500mA
- Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5Ω@10V,200mA
- Package: TO-92-3
- Manufacturer: onsemi